MBR2045CT, MBRF2045CT
http://onsemi.com
6
HIGH FREQUENCY OPERATION
Since current flow in a Schottky rectifier is the result of
majority carrier conduction, it is not subject to junction di-
ode forward and reverse recovery transients due to minority
carrier injection and stored charge. Satisfactory circuit ana-
lysis work may be performed by using a model consisting
of an ideal diode in parallel with a variable capacitance.
(See Figure 12.)
Rectification efficiency measurements show that opera-
tion will be satisfactory up to several megahertz. For ex-
ample, relative waveform rectification efficiency is ap-
proximately 70 percent at 2.0 MHz, e.g., the ratio of dc
power to RMS power in the load is 0.28 at this frequency,
whereas perfect rectification would yield 0.406 for sine
wave inputs. However, in contrast to ordinary junction di-
odes, the loss in waveform efficiency is not indicative of
power loss; it is simply a result of reverse current flow
through the diode capacitance, which lowers the dc output
voltage.
2.0 s
1.0 kHz
12 V 100
VCC
12 Vdc
2N2222
CURRENT
AMPLITUDE
ADJUST
0-10 AMPS
100
CARBON
2N6277
1.0 CARBON
1N5817
D.U.T.
2.0 k
+150 V, 10 mAdc
4.0 F
+
VR, REVERSE VOLTAGE (VOLTS)
1000
500
300
0
05010 20 30
40
700
C, CAPACITANCE (pF)
Figure 12. Typical Capacitance
200
Figure 13. Test Circuit for dv/dt and Reverse Surge Current
TJ
= 25
°C
f = 1 MHz
100
600
400
800
900
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